1.5 v drive pch mosfet + pnp transistor QS8F2 ? structure silicon p-channel mosfet/ pnp transistor ? features 1) low on-resistance. 2) high power package(tsmt8). 3) low voltage drive(1.5v drive). ? application switching ? packaging specifications package taping code tr basic ordering unit (pieces) 3000 QS8F2 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 12 v gate-source voltage v gss ? 10 v continuous i d ? 2.5 a pulsed i dp ? 10 a continuous i s ? 1a pulsed i sp ? 10 a * pw ? 10 ? s, duty cycle ? 1% symbol limits unit collector-emitter voltage v ceo ? 30 v collector-base voltage v cbo ? 30 v emitter-base voltage v ebo ? 6v continuous i c ? 2a pulsed i cp ? 4a * pw ? 1ms, pulsed symbol limits unit 1.5 w / total 1.25 w / element junction temperature tj 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c * mounted on a ceramic board. p d type drain current source current (body diode) parameter collector current parameter parameter power dissipation (1) tr1 source (2) tr1 gate (3) tr2 emitter (4) tr2 base (5) tr2 collector (6) tr2 collector (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) abbreviated symbol : f02 * * * * ?dimensions (unit : mm) ?inner circuit ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) 1/6 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8F2 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 10v, v ds =0v drain-source breakdown voltage v (br)dss ? 12 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 12v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 6v, i d = ? 1ma -4461 i d = ? 2.5a, v gs = ? 4.5v -6084 i d = ? 1.2a, v gs = ? 2.5v - 81 121 i d = ? 1.2a, v gs = ? 1.8v - 110 220 i d = ? 0.5a, v gs = ? 1.5v forward transfer admittance l y fs l 3.5 - - s v ds = ? 6v, i d = ? 2.5a input capacitance c iss - 1350 - pf v ds = ? 6v output capacitance c oss - 130 - pf v gs =0v reverse transfer capacitance c rss - 125 - pf f=1mhz turn-on delay time t d(on) -9-nsi d = ? 1.2a, v dd ? 6v rise time t r - 35 - ns v gs = ? 4.5v turn-off delay time t d(off) - 130 - ns r l =5 ? fall time t f - 85 - ns r g =10 ? total gate charge q g - 13 - nc i d = ? 2.5a, gate-source charge q gs - 2.5 - nc v dd ? 6v gate-drain charge q gd - 2.0 - nc v gs = ? 4.5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 2.5a, v gs =0v *pulsed symbol min. typ. max. unit collector-emitter breakdown voltage bv ceo ? 30 - - v i c = ? 1ma collector-base breakdown voltage bv cbo ? 30 - - v i c = ? 10a emitter-base breakdown voltage bv ebo ? 6- -v i e = ? 10a collector cut-off current i cbo -- ? 100 na v cb = ? 30v emitter cut-off current i ebo -- ? 100 na v eb = ? 6v collector-emitter saturation voltage v ce(sat) - ? 180 ? 370 mv i c = ? 1.5a , i b = ? 75ma dc current gain fe 270 - 680 - v ce = ? 2v,i c = ? 200ma *pulsed -pf v cb = ? 10v,i e =0ma, f=1mhz parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter collector output capacitance c ob -20 parameter conditions transistor frequency f t - 280 - mhz v ce = ? 2v,i e =200ma, f=100mh * * * * * * * * * * * * * * * * * * 2/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8F2 ? electrical characteristic curves (ta=25 ? c) tr.1 3/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-state resistance : r ds (on) [m] (on) [m] . 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 source-drain voltage : -v sd [v] reverse drain current : -is [a] v gs =0v pulsed ta=125 b] ta=75 b] ta=25 b] ta=-25 b] 0 2 4 6 8 10 0 2 4 6 8 10 drain-source voltage -v ds [v] drain current -i d [a] v gs = -1.2v v gs = -1.5v ta=25 b] pulsed v gs = -10v v gs = -4.5v v gs = -2.5v v gs = -1.8v 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-state resistance : r ds (on) [m] (on) [m] (on) [m]
QS8F2 4/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet 0 50 100 150 200 0 5 10 gate-source voltage : -v gs [v] static drain-source on-state resistance : r ds ( on ) [ m ciss coss crss ta=25 b] f=1mhz v gs =0v 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width : pw(s) normarized transient thermal resistance : r (t) ta = 25 b] single pulse : 1unit rth h ch-a hh t h = hnh t h rth h ch-a h rth h ch-a h = 62.5 b] /w 0 1 10 100 0.1 1.0 10.0 drain current : -i d [a] forward transfer admittance : |yfs| [s] v ds = -6v pulsed ta= -25 b] ta=25 b] ta=75 b] ta=125 b] 1 10 100 1000 0.01 0.1 1 10 drain current : -i d [a] switching time : t [ns] tr tf td(on) td(off) ta=25 b] v dd = -6v v gs =-4.5v r g = 10
QS8F2 tr.2 5/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8F2 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design es d protection circuit. fig.1-1 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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